BAND-TO-BAND AUGER PROCESSES IN 0.95 EV BANDGAP (LAMBDA = 1.3-MU-M) (ALXGA1-X)0.48IN0.52AS LATTICE MATCHED TO INP

被引：4

作者：

BARDYSZEWSKI, W ^{[1
]}

YEVICK, D ^{[1
]}

机构：

[1] UNIV LUND, DEPT THEORET PHYS, S-22362 LUND, SWEDEN

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 02期

关键词：

D O I：

10.1049/el:19850040

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：58 / 59

页数：2

共 13 条

[1] PREPARATION AND PROPERTIES OF MOLECULAR-BEAM EPITAXY GROWN (AL0.5GA0.5)0.48IN0.52AS [J].

BARNARD, JA ;

WOOD, CEC ;

EASTMAN, LF .

ELECTRON DEVICE LETTERS, 1982, 3 (10) :318-319

[2] CALCULATIONS OF OVERLAP INTEGRALS FOR AUGER PROCESSES INVOLVING DIRECT BAND-GAP SEMICONDUCTORS [J].

BRAND, S ;

ABRAM, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (07) :L201-L206

[3] OVERLAP INTEGRALS FOR AUGER RECOMBINATION IN DIRECT GAP III-V SEMICONDUCTORS - CALCULATIONS FOR CONDUCTION AND HEAVY HOLE BAND STATES WITH WAVEVECTORS ALONG THE (001) DIRECTION IN GAAS AND INP [J].

BURT, MG ;

SMITH, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (02) :L47-L52

[4]

GELMONT BL, 1979, SOV PHYS JETP, V48, P268

[5] AUGER-EFFECT IN HG1-XCDXTE [J].

GERHARDTS, RR ;

DORNHAUS, R ;

NIMTZ, G .

SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1467-1470

[6]

MAHAN GD, 1981, MANY PARTICLE PHYSIC, P560

[7] CALCULATED AUGER RATES AND TEMPERATURE-DEPENDENCE OF THRESHOLD FOR SEMICONDUCTOR-LASERS EMITTING AT 1.3 AND 1.55-MU-M [J].

NELSON, RJ ;

DUTTA, NK .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :2923-2929

[8] COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP [J].

OLEGO, D ;

CHANG, TY ;

SILBERG, E ;

CARIDI, EA ;

PINCZUK, A .

APPLIED PHYSICS LETTERS, 1982, 41 (05) :476-478

[9]

OLSHANSKY R, 1984, IEEE J QUANTUM ELECT, V20, P828

[10]

STANLEY CR, 1982, I PHYS C SER, V65, P173

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