BAND-TO-BAND AUGER PROCESSES IN 0.95 EV BANDGAP (LAMBDA = 1.3-MU-M) (ALXGA1-X)0.48IN0.52AS LATTICE MATCHED TO INP

被引:4
作者
BARDYSZEWSKI, W [1 ]
YEVICK, D [1 ]
机构
[1] UNIV LUND, DEPT THEORET PHYS, S-22362 LUND, SWEDEN
关键词
D O I
10.1049/el:19850040
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
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页码:58 / 59
页数:2
相关论文
共 13 条
[1]   PREPARATION AND PROPERTIES OF MOLECULAR-BEAM EPITAXY GROWN (AL0.5GA0.5)0.48IN0.52AS [J].
BARNARD, JA ;
WOOD, CEC ;
EASTMAN, LF .
ELECTRON DEVICE LETTERS, 1982, 3 (10) :318-319
[2]   CALCULATIONS OF OVERLAP INTEGRALS FOR AUGER PROCESSES INVOLVING DIRECT BAND-GAP SEMICONDUCTORS [J].
BRAND, S ;
ABRAM, RA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (07) :L201-L206
[3]   OVERLAP INTEGRALS FOR AUGER RECOMBINATION IN DIRECT GAP III-V SEMICONDUCTORS - CALCULATIONS FOR CONDUCTION AND HEAVY HOLE BAND STATES WITH WAVEVECTORS ALONG THE (001) DIRECTION IN GAAS AND INP [J].
BURT, MG ;
SMITH, C .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (02) :L47-L52
[4]  
GELMONT BL, 1979, SOV PHYS JETP, V48, P268
[5]   AUGER-EFFECT IN HG1-XCDXTE [J].
GERHARDTS, RR ;
DORNHAUS, R ;
NIMTZ, G .
SOLID-STATE ELECTRONICS, 1978, 21 (11-1) :1467-1470
[6]  
MAHAN GD, 1981, MANY PARTICLE PHYSIC, P560
[7]   CALCULATED AUGER RATES AND TEMPERATURE-DEPENDENCE OF THRESHOLD FOR SEMICONDUCTOR-LASERS EMITTING AT 1.3 AND 1.55-MU-M [J].
NELSON, RJ ;
DUTTA, NK .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :2923-2929
[8]   COMPOSITIONAL DEPENDENCE OF BAND-GAP ENERGY AND CONDUCTION-BAND EFFECTIVE MASS OF IN1-X-YGAXALY AS LATTICE MATCHED TO INP [J].
OLEGO, D ;
CHANG, TY ;
SILBERG, E ;
CARIDI, EA ;
PINCZUK, A .
APPLIED PHYSICS LETTERS, 1982, 41 (05) :476-478
[9]  
OLSHANSKY R, 1984, IEEE J QUANTUM ELECT, V20, P828
[10]  
STANLEY CR, 1982, I PHYS C SER, V65, P173