CALCULATED AUGER RATES AND TEMPERATURE-DEPENDENCE OF THRESHOLD FOR SEMICONDUCTOR-LASERS EMITTING AT 1.3 AND 1.55-MU-M

被引：13

作者：

NELSON, RJ

DUTTA, NK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 06期

关键词：

D O I：

10.1063/1.332494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2923 / 2929

页数：7

共 30 条

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