OVERLAP INTEGRALS FOR AUGER RECOMBINATION IN DIRECT GAP III-V SEMICONDUCTORS - CALCULATIONS FOR CONDUCTION AND HEAVY HOLE BAND STATES WITH WAVEVECTORS ALONG THE (001) DIRECTION IN GAAS AND INP

被引：23

作者：

BURT, MG

SMITH, C

机构：

[1] UNIV DURHAM,DEPT APPL PHYS & ELECTR,DURHAM DH1 3LE,ENGLAND

[2] SCI LABS,DURHAM DH1 3LE,ENGLAND

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 02期

关键词：

D O I：

10.1088/0022-3719/17/2/003

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L47 / L52

页数：6

共 15 条

[1] [Anonymous], 1966, SEMICONDUCTORS SEMIM
[2] OVERLAP INTEGRALS FOR BLOCH ELECTRONS
ANTONCIK, E
LANDSBERG, PT
[J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (527): : 337 - &
[3] AUGER EFFECT IN SEMICONDUCTORS
BEATTIE, AR
LANDSBERG, PT
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256): : 16 - 29
[4] RECOMBINATION IN SEMICONDUCTORS BY A LIGHT HOLE AUGER TRANSITION
BEATTIE, AR
SMITH, G
[J]. PHYSICA STATUS SOLIDI, 1967, 19 (02): : 577 - &
[5] AUGER RECOMBINATION RATE IN INGAASP LASERS
BURT, MG
[J]. ELECTRONICS LETTERS, 1982, 18 (19) : 806 - 807
[6] ENERGY-BAND STRUCTURE OF GERMANIUM AND SILICON - K.P METHOD
CARDONA, M
POLLAK, FH
[J]. PHYSICAL REVIEW, 1966, 142 (02): : 530 - &
[7] INTERBAND AUGER RECOMBINATION IN INGAASP
CHIU, LC
CHEN, PC
YARIV, A
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) : 938 - 941
[8] THE CASE FOR AUGER RECOMBINATION IN IN1-XGAXASYP1-Y
DUTTA, NK
NELSON, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (01) : 74 - 92
[9] DIRECT CALCULATION OF OVERLAP INTEGRALS AND THE AUGER RECOMBINATION COEFFICIENT IN GAP
DZWIG, P
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1979, 12 (10): : 1809 - 1818
[10] AUGER-EFFECT IN HG1-XCDXTE
GERHARDTS, RR
DORNHAUS, R
NIMTZ, G
[J]. SOLID-STATE ELECTRONICS, 1978, 21 (11-1) : 1467 - 1470