STRUCTURAL CHARACTERIZATION OF EMBEDDED GALLIUM-ARSENIDE ON SILICON BY MOLECULAR-BEAM EPITAXY

[1] DEBOECK J, UNPUB

[2] FISHER R, 1986, APPL PHYS LETT, V48, P1223, DOI DOI 10.1063/1.96988

[3] HARRIS JS, 1986, MRS S P, V91, P3

[4] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671

[5] SUBSTRATE ORIENTATION AND PROCESSING EFFECTS ON GAAS/SI MISORIENTATION IN GAAS-ON-SI GROWN BY MBE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (01) : 87 - 93

[6] VANHELLEMONT J, IN PRESS MRS S P, V115

[1] DEBOECK J, UNPUB

[2] FISHER R, 1986, APPL PHYS LETT, V48, P1223, DOI DOI 10.1063/1.96988

[3] HARRIS JS, 1986, MRS S P, V91, P3

[4] LOW-TEMPERATURE SURFACE CLEANING OF SILICON AND ITS APPLICATION TO SILICON MBE [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (04) : 666 - 671

[5] SUBSTRATE ORIENTATION AND PROCESSING EFFECTS ON GAAS/SI MISORIENTATION IN GAAS-ON-SI GROWN BY MBE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (01) : 87 - 93

[6] VANHELLEMONT J, IN PRESS MRS S P, V115