SUBSTRATE ORIENTATION AND PROCESSING EFFECTS ON GAAS/SI MISORIENTATION IN GAAS-ON-SI GROWN BY MBE

被引：53

作者：

MATYI, RJ

LEE, JW

SCHAAKE, HF

机构：

来源：

关键词：

D O I：

10.1007/BF02652239

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：87 / 93

页数：7

共 18 条

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[J]. APPLIED PHYSICS LETTERS, 1986, 48 (18) : 1223 - 1225
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[9] KOESTNER RJ, 1986, 1986 P US WORKSH PHY, P13
[10] DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES
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TSAI, HL
MATYI, RJ
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (01) : 31 - 33