EFFECT OF INSITU AND EXSITU ANNEALING ON DISLOCATIONS IN GAAS ON SI SUBSTRATES

被引：106

作者：

CHOI, C

OTSUKA, N

MUNNS, G

HOUDRE, R

MORKOC, H

ZHANG, SL

LEVI, D

KLEIN, MV

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 15期

关键词：

D O I：

10.1063/1.97956

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：992 / 994

页数：3

共 12 条

[1] CAHN RW, 1982, PHYSICAL METALLURG 2, P1595
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[3] LOW THRESHOLD LASER OPERATION AT ROOM-TEMPERATURE IN GAAS/(AL,GA)AS STRUCTURES GROWN DIRECTLY ON (100)SI
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[4] MONOLITHIC INTEGRATION OF GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND N-METAL-OXIDE-SEMICONDUCTOR SILICON CIRCUITS
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (09) : 983 - 985
[5] MATERIAL PROPERTIES OF HIGH-QUALITY GAAS EPITAXIAL LAYERS GROWN ON SI SUBSTRATES
FISCHER, R
MORKOC, H
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ZABEL, H
CHOI, C
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ERICKSON, LP
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (05) : 1640 - 1647
[6] GROWTH AND PROPERTIES OF GAAS/ALGAAS ON NONPOLAR SUBSTRATES USING MOLECULAR-BEAM EPITAXY
FISCHER, R
MASSELINK, WT
KLEM, J
HENDERSON, T
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 58 (01) : 374 - 381
[7] ELIMINATION OF DARK LINE DEFECTS IN LATTICE-MISMATCHED EPILAYERS THROUGH USE OF STRAINED-LAYER SUPERLATTICES
GOURLEY, PL
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DAWSON, LR
[J]. APPLIED PHYSICS LETTERS, 1985, 47 (05) : 482 - 484
[8] DEFECTS IN EPITAXIAL MULTILAYERS .3. PREPARATION OF ALMOST PERFECT MULTILAYERS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF CRYSTAL GROWTH, 1976, 32 (02) : 265 - 273
[9] MORKOC H, IN PRESS SCIENCE
[10] HIGH-RESOLUTION ELECTRON-MICROSCOPY OF MISFIT DISLOCATIONS IN THE GAAS/SI EPITAXIAL INTERFACE
OTSUKA, N
CHOI, C
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MORKOC, H
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (05) : 277 - 279

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