MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS

被引：25

作者：

CHOI, HK

TURNER, GW

TSAUR, BY

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 04期

关键词：

D O I：

10.1109/EDL.1986.26358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：241 / 243

页数：3

共 14 条

[1] GAAS-MESFETS FABRICATED ON MONOLITHIC GAAS/SI SUBSTRATES [J].

CHOI, HK ;

TSAUR, BY ;

METZE, GM ;

TURNER, GW ;

FAN, JCC .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :207-208

[2] CHARACTERISTICS OF GAAS/AIGAAS MODFETS GROWN DIRECTLY ON (100) SILICON [J].

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

MASSELINK, WT ;

KOPP, W ;

MORKOC, H ;

LITTON, CW .

ELECTRONICS LETTERS, 1984, 20 (22) :945-947

[3] MONOLITHIC INTEGRATION OF GAAS/ALGAAS MODULATION-DOPED FIELD-EFFECT TRANSISTORS AND N-METAL-OXIDE-SEMICONDUCTOR SILICON CIRCUITS [J].

FISCHER, R ;

HENDERSON, T ;

KLEM, J ;

KOPP, W ;

PENG, CK ;

MORKOC, H ;

DETRY, J ;

BLACKSTONE, SC .

APPLIED PHYSICS LETTERS, 1985, 47 (09) :983-985

[4] GAAS BIPOLAR-TRANSISTORS GROWN ON (100) SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

FISCHER, R ;

CHAND, N ;

KOPP, W ;

MORKOC, H ;

ERICKSON, LP ;

YOUNGMAN, R .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :397-399

[5] GAAS LIGHT-EMITTING-DIODES FABRICATED ON GE-COATED SI SUBSTRATES [J].

FLETCHER, RM ;

WAGNER, DK ;

BALLANTYNE, JM .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :967-969

[6] GAAS SHALLOW-HOMOJUNCTION SOLAR-CELLS ON GE-COATED SI SUBSTRATES [J].

GALE, RP ;

FAN, JCC ;

TSAUR, BY ;

TURNER, GW ;

DAVIS, FM .

ELECTRON DEVICE LETTERS, 1981, 2 (07) :169-171

[7]

ISHIDA T, 1984, 42ND ANN DEV RES C S

[8] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

CHOI, HK ;

TSAUR, BY .

APPLIED PHYSICS LETTERS, 1984, 45 (10) :1107-1109

[9] HIGH-QUALITY GAAS-MESFETS GROWN ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

MORKOC, H ;

PENG, CK ;

HENDERSON, T ;

KOPP, W ;

FISCHER, R ;

ERICKSON, LP ;

LONGERBONE, MD ;

YOUNGMAN, RC .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) :381-383

[10] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE [J].

NONAKA, T ;

AKIYAMA, M ;

KAWARADA, Y ;

KAMINISHI, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12) :L919-L921

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