HIGH-QUALITY GAAS-MESFETS GROWN ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY

被引：23

作者：

MORKOC, H

PENG, CK

HENDERSON, T

KOPP, W

FISCHER, R

ERICKSON, LP

LONGERBONE, MD

YOUNGMAN, RC

机构：

[1] PERKIN ELMER CORP,EDIN PRAIRIE,MN

[2] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 07期

关键词：

D O I：

10.1109/EDL.1985.26162

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：381 / 383

页数：3

共 11 条

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[9] SUB-MICRON GATE GAAS/AL0.3GA0.7AS MESFETS WITH EXTREMELY SHARP INTERFACES (40 A) [J].

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