SUB-MICRON GATE GAAS/AL0.3GA0.7AS MESFETS WITH EXTREMELY SHARP INTERFACES (40 A)

被引：15

作者：

MORKOC, H ^{[1
]}

KOPP, WF ^{[1
]}

DRUMMOND, TJ ^{[1
]}

SU, SL ^{[1
]}

THORNE, RE ^{[1
]}

FISCHER, R ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/T-ED.1982.20824

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1013 / 1018

页数：6

共 15 条

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[7] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE [J].

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[8] STUDY OF HIGH-SPEED NORMALLY OFF AND NORMALLY ON AI0.5GA0.5AS HETEROJUNCTION GATE GAAS FETS (HJFET) [J].

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[9] INTERFACIAL PROPERTIES OF (AL,GA)AS/GAAS STRUCTURES - EFFECT OF SUBSTRATE-TEMPERATURE DURING GROWTH BY MOLECULAR-BEAM EPITAXY [J].

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[10] SHORT-WAVELENGTH CONTINUOUS 300-K PHOTOPUMPED ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASER (LAMBDAL GREATER-THAN-OR-EQUAL-TO-7270 A) [J].

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