共 22 条
- [1] MECHANISM OF SURFACE CONDUCTION IN SEMI-INSULATING GAAS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (09) : 869 - 871
- [2] DASCALU D, 1977, ELECTRONIC PROCESSES
- [3] DAVANZO D, 1982, IEEE T ELECTRON DEV, V29, P1051
- [4] SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (06) : 2532 - 2536
- [5] GORONKIN H, 1981, P I PHYS C SER, V63, P287
- [6] Hasegawa H., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P145
- [7] SILICON INSULATED-GATE FIELD-EFFECT TRANSISTOR [J]. PROCEEDINGS OF THE IEEE, 1963, 51 (09) : 1190 - &
- [9] Lampert M.A., 1970, PHYS B, DOI DOI 10.1088/0031-9112/21/12/031/PDF
- [10] Lee C. P., 1982, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1982, P169