SEMI-INSULATING LAYERS OF GAAS BY OXYGEN IMPLANTATION

被引：85

作者：

FAVENNEC, PN ^{[1
]}

机构：

[1] CPM PMT CTR NATL ETUD TELECOMMUN,E-22301 LANNION,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 06期

关键词：

D O I：

10.1063/1.322970

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2532 / 2536

页数：5

共 18 条

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