PHOTOVOLTAIC EFFECTS ON O+ IMPLANTED GAAS

[1] ABDALLA MI, 1975, GALLIUM ARSENIDE REL

[2] RADIATION EFFECTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3590 - +

[3] BLUM JM, 1974, IEEE C SEMICONDUCTOR

[4] NEAR BAND EDGE OPTICAL ABSORPTION PRODUCED BY ION IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (01) : 16 - &

[5] BRAILOVSKII EY, 1972, LATTICE DEFECTS SEMI, P121

[6] FAVENNEC PN, 1973, ION IMPLANTATION SEM

[7] FAVENNEC PN, 1975, ION IMPLANTATION SEM

[8] VODOPYAN.LK, 1966, FIZ TVERD TELA+, V8, P204

[1] ABDALLA MI, 1975, GALLIUM ARSENIDE REL

[2] RADIATION EFFECTS IN GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (12) : 3590 - +

[3] BLUM JM, 1974, IEEE C SEMICONDUCTOR

[4] NEAR BAND EDGE OPTICAL ABSORPTION PRODUCED BY ION IMPLANTATION IN GAAS [J]. APPLIED PHYSICS LETTERS, 1971, 18 (01) : 16 - &

[5] BRAILOVSKII EY, 1972, LATTICE DEFECTS SEMI, P121

[6] FAVENNEC PN, 1973, ION IMPLANTATION SEM

[7] FAVENNEC PN, 1975, ION IMPLANTATION SEM

[8] VODOPYAN.LK, 1966, FIZ TVERD TELA+, V8, P204