CURRENT OSCILLATIONS IN SEMI-INSULATING GAAS ASSOCIATED WITH FIELD-ENHANCED CAPTURE OF ELECTRONS BY THE MAJOR DEEP DONOR EL2

被引:75
作者
KAMINSKA, M [1 ]
PARSEY, JM [1 ]
LAGOWSKI, J [1 ]
GATOS, HC [1 ]
机构
[1] MIT,CAMBRIDGE,MA 02139
关键词
D O I
10.1063/1.93366
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:989 / 991
页数:3
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  • [1] BARRAUD A, 1963, CR HEBD ACAD SCI, V256, P3632
  • [2] BOER KW, 1964, 7 P INT C PAR, P987
  • [3] MICROWAVE OSCILLATIONS OF CURRENT IN III-V SEMICONDUCTORS
    GUNN, JB
    [J]. SOLID STATE COMMUNICATIONS, 1963, 1 (04) : 88 - 91
  • [4] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP
    HENRY, CH
    LANG, DV
    [J]. PHYSICAL REVIEW B, 1977, 15 (02): : 989 - 1016
  • [5] ORIGIN OF THE 0.82-EV ELECTRON TRAP IN GAAS AND ITS ANNIHILATION BY SHALLOW DONORS
    LAGOWSKI, J
    GATOS, HC
    PARSEY, JM
    WADA, K
    KAMINSKA, M
    WALUKIEWICZ, W
    [J]. APPLIED PHYSICS LETTERS, 1982, 40 (04) : 342 - 344
  • [6] OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS
    MARTIN, GM
    [J]. APPLIED PHYSICS LETTERS, 1981, 39 (09) : 747 - 748
  • [7] COMPENSATION MECHANISMS IN GAAS
    MARTIN, GM
    FARGES, JP
    JACOB, G
    HALLAIS, JP
    POIBLAUD, G
    [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2840 - 2852
  • [8] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
    MARTIN, GM
    MITONNEAU, A
    MIRCEA, A
    [J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193
  • [9] MARTIN GM, 1980, 1980 P SEM INS 3 5 M
  • [10] OUTDIFFUSION OF DEEP ELECTRON TRAPS IN EPITAXIAL GAAS
    MIRCEA, A
    MITONNEAU, A
    HOLLAN, L
    BRIERE, A
    [J]. APPLIED PHYSICS, 1976, 11 (02): : 153 - 158