OPTICAL ASSESSMENT OF THE MAIN ELECTRON TRAP IN BULK SEMI-INSULATING GAAS

被引：446

作者：

MARTIN, GM

机构：

来源：

关键词：

D O I：

10.1063/1.92852

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：747 / 748

页数：2

共 13 条

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[3] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) : 4022 - 4026
[4] LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904
[5] COMPENSATION MECHANISMS IN GAAS
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[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) : 2840 - 2852
[6] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS
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[J]. ELECTRONICS LETTERS, 1977, 13 (07) : 191 - 193
[7] MEASUREMENT OF THE CHROMIUM CONCENTRATION IN SEMI-INSULATING GAAS USING OPTICAL-ABSORPTION
MARTIN, GM
VERHEIJKE, ML
JANSEN, JAJ
POIBLAUD, G
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) : 467 - 471
[8] MARTIN GM, 1981, I PHYS C SER, V59, P281
[9] MARTIN GM, 1978, 1978 P TOP C CHAR TE, V78, P32
[10] MARTIN GM, 1980, 3 5 P SEM INS MAT C, P13