MECHANISM OF SURFACE CONDUCTION IN SEMI-INSULATING GAAS

[1] CHANG MF, UNPUB SEMIINSULATING

[2] CHEN RC, COMMUNICATION

[3] CORRELATION OF GAAS SURFACE-CHEMISTRY AND INTERFACE FERMI-LEVEL POSITION - A SINGLE DEFECT MODEL INTERPRETATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 477 - 480

[4] HASEGAWA F, 1983, 15TH C SOL STAT DEV

[5] COMPENSATION MECHANISM IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS - IMPORTANCE OF MELT STOICHIOMETRY [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 949 - 955

[6] HUGHES B, 1982, INT S GAAS RELATED C

[7] INJECTION CURRENTS IN INSULATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (08): : 1781 - &

[8] LEE CP, 1982, IEEE ELECTRON DEVICE, V3, P97

[9] LEE CP, 1982, 1982 IEEE GAAS IC S, P169

[10] OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 161 - 163

[1] CHANG MF, UNPUB SEMIINSULATING

[2] CHEN RC, COMMUNICATION

[3] CORRELATION OF GAAS SURFACE-CHEMISTRY AND INTERFACE FERMI-LEVEL POSITION - A SINGLE DEFECT MODEL INTERPRETATION [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 477 - 480

[4] HASEGAWA F, 1983, 15TH C SOL STAT DEV

[5] COMPENSATION MECHANISM IN LIQUID ENCAPSULATED CZOCHRALSKI GAAS - IMPORTANCE OF MELT STOICHIOMETRY [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1982, 30 (07) : 949 - 955

[6] HUGHES B, 1982, INT S GAAS RELATED C

[7] INJECTION CURRENTS IN INSULATORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1962, 50 (08): : 1781 - &

[8] LEE CP, 1982, IEEE ELECTRON DEVICE, V3, P97

[9] LEE CP, 1982, 1982 IEEE GAAS IC S, P169

[10] OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 161 - 163