CORRELATION OF GAAS SURFACE-CHEMISTRY AND INTERFACE FERMI-LEVEL POSITION - A SINGLE DEFECT MODEL INTERPRETATION

被引：101

作者：

GRANT, RW

WALDROP, JR

KOWALCZYK, SP

KRAUT, EA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1981年 / 19卷 / 03期

关键词：

D O I：

10.1116/1.571042

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：477 / 480

页数：4

共 8 条

[1] THEORY OF THE SILICON VACANCY - AN ANDERSON NEGATIVE-U SYSTEM [J].

BARAFF, GA ;

KANE, EO ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1980, 21 (12) :5662-5686

[2] ENERGY-LEVELS OF SEMICONDUCTOR SURFACE VACANCIES [J].

DAW, MS ;

SMITH, DL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1028-1031

[3]

GRANT RW, 1980, PHYSICS MOS INSULATO, P202

[4] PRECISE DETERMINATION OF THE VALENCE-BAND EDGE IN X-RAY PHOTOEMISSION SPECTRA - APPLICATION TO MEASUREMENT OF SEMICONDUCTOR INTERFACE POTENTIALS [J].

KRAUT, EA ;

GRANT, RW ;

WALDROP, JR ;

KOWALCZYK, SP .

PHYSICAL REVIEW LETTERS, 1980, 44 (24) :1620-1623

[5] HIGH-RESOLUTION X-RAY PHOTOEMISSION SPECTRA OF PBS, PBSE, AND PBTE VALENCE BANDS [J].

MCFEELY, FR ;

KOWALCZYK, S ;

LEY, L ;

POLLAK, RA ;

SHIRLEY, DA .

PHYSICAL REVIEW B, 1973, 7 (12) :5228-5237

[6]

SHISHIYA.FS, 1966, FIZ TVERD TELA+, V8, P1053

[7] UNIFIED DEFECT MODEL AND BEYOND [J].

SPICER, WE ;

LINDAU, I ;

SKEATH, P ;

SU, CY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1019-1027

[8] OXYGEN-ADSORPTION ON THE GAAS(110) SURFACE [J].

SU, CY ;

LINDAU, I ;

SKEATH, PR ;

CHYE, PW ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :936-941

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