OUT-DIFFUSION OF THE MAIN ELECTRON TRAP IN BULK GAAS DUE TO THERMAL-TREATMENT

被引：80

作者：

MAKRAMEBEID, S

GAUTARD, D

DEVILLARD, P

MARTIN, GM

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 02期

关键词：

D O I：

10.1063/1.93028

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：161 / 163

页数：3

共 12 条

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[2] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J].

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[3]

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APPLIED PHYSICS LETTERS, 1979, 35 (03) :277-279

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JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2840-2852

[6] OUTDIFFUSION OF DEEP ELECTRON TRAPS IN EPITAXIAL GAAS [J].

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[7]

MIRCEA A, COMMUNICATION

[8] ELECTRON TRAP-FREE LOW DISLOCATION MELT-GROWN GAAS [J].

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GATOS, HC .

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[9] Study of Encapsulants for Annealing GaAs [J].

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Helix, M. J. ;

Wolford, D. J. ;

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Blattner, R. J. ;

Evans, C. A., Jr. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) :1781-1784

[10] CHROMIUM REDISTRIBUTION DURING THERMAL ANNEALING OF SEMI-INSULATING GAAS AS A FUNCTION OF ENCAPSULANT AND IMPLANT FLUENCE [J].

VASUDEV, PK ;

WILSON, RG ;

EVANS, CA .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :837-840

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