Study of Encapsulants for Annealing GaAs

被引：77

作者：

Vaidyanathan, K. V. ^{[1
,2
]}

Helix, M. J. ^{[1
,2
]}

Wolford, D. J. ^{[1
,2
]}

Streetman, B. G. ^{[1
,2
]}

Blattner, R. J. ^{[3
]}

Evans, C. A., Jr. ^{[3
,4
]}

机构：

[1] Univ Illinois, Coordinated Sci Lab, Urbana, IL 61801 USA

[2] Univ Illinois, Dept Elect Engn, Urbana, IL 61801 USA

[3] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

[4] Univ Illinois, Sch Chem Sci, Urbana, IL 61801 USA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1977年 / 124卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1149/1.2133156

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Low temperature photoluminescence and Auger electron spectroscopy have been used to study chemical-vapor deposited SiO(2) and Si(3)N(4) layers as encapsulants for high temperature annealing of GaAs. Silicon dioxide or silicon oxynitride layers allow out-diffusion of Ga, while suitably prepared rf plasma deposited Si(3)N(4) layers can be used to anneal GaAs with negligible Ga outdiffusion.

引用

页码：1781 / 1784

页数：4

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