ELECTRON TRAP-FREE LOW DISLOCATION MELT-GROWN GAAS

被引：27

作者：

PARSEY, JM

NANISHI, Y

LAGOWSKI, J

GATOS, HC

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 04期

关键词：

D O I：

10.1149/1.2127539

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：936 / 938

页数：3

共 12 条

[1]

AUCOIN TR, 1979, SOLID STATE TECH JAN

[2] BEHAVIOR OF LATTICE DEFECTS IN GAAS [J].

BLANC, J ;

WEISBERG, LR ;

BUBE, RH .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1964, 25 (02) :225-&

[3] METHOD FOR MEASUREMENT OF SHORT MINORITY CARRIER DIFFUSION LENGTHS IN SEMICONDUCTORS [J].

GOODMAN, AM .

JOURNAL OF APPLIED PHYSICS, 1961, 32 (12) :2550-&

[4] DIRECT EVIDENCE FOR THE NON-ASSIGNMENT TO OXYGEN OF THE MAIN ELECTRON TRAP IN GAAS [J].

HUBER, AM ;

LINH, NT ;

VALLADON, M ;

DEBRUN, JL ;

MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (06) :4022-4026

[5]

HURLE DTJ, 1977, I PHYS C, pCH2

[6] STUDY OF DEFORMATION-PRODUCED DEEP LEVELS IN N-GAAS USING DEEP LEVEL TRANSIENT CAPACITANCE SPECTROSCOPY [J].

ISHIDA, T ;

MAEDA, K ;

TAKEUCHI, S .

APPLIED PHYSICS, 1980, 21 (03) :257-261

[7]

KESMANL FP, 1973, GAAS GROWTH PROPERTI, P267

[8] ELECTRON TRAPS IN BULK AND EPITAXIAL GAAS CRYSTALS [J].

MARTIN, GM ;

MITONNEAU, A ;

MIRCEA, A .

ELECTRONICS LETTERS, 1977, 13 (07) :191-193

[9]

NANISHI Y, UNPUBLISHED

[10]

PARSEY JM, UNPUBLISHED

← 1 2 →