DEFECT REDUCTION BY THERMAL ANNEALING OF GAAS-LAYERS GROWN BY MOLECULAR-BEAM EPITAXY ON SI SUBSTRATES

被引：197

作者：

LEE, JW

SHICHIJO, H

TSAI, HL

MATYI, RJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 01期

关键词：

D O I：

10.1063/1.98117

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：31 / 33

页数：3

共 9 条

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[2]

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[5]

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[6]

LEE JW, 1986, 7TH MOL BEAM EP WORK

[7] OPTICAL-PROPERTIES OF GAAS ON (100) SI USING MOLECULAR-BEAM EPITAXY [J].

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KLEM, J ;

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MORKOC, H ;

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APPLIED PHYSICS LETTERS, 1984, 45 (12) :1309-1311

[8] METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN GAAS-LAYERS GROWN DIRECTLY ON SI SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].

METZE, GM ;

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TSAUR, BY .

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[9]

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