DIGITAL CHARACTERISTICS OF CMOS DEVICES AT CRYOGENIC TEMPERATURES

被引:10
作者
DEEN, MJ
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D O I
10.1109/4.16315
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:158 / 164
页数:7
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共 21 条
[1]  
ALLEN PB, 1987, CMOS ANALOG CIRCUIT, P257
[2]   PERFORMANCE AND HOT-CARRIER EFFECTS OF SMALL CRYO-CMOS DEVICES [J].
AOKI, M ;
HANAMURA, S ;
MASUHARA, T ;
YANO, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) :8-18
[3]   A SEMIEMPIRICAL MODEL OF THE MOSFET INVERSION LAYER MOBILITY FOR LOW-TEMPERATURE OPERATION [J].
ARORA, ND ;
GILDENBLAT, GS .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (01) :89-93
[4]  
Deen M. J., 1988, Proceedings of the Symposium on Low Temperature Electronics and High Temperature Superconductors, P108
[5]   OPERATIONAL CHARACTERISTICS OF A CMOS MICROPROCESSOR SYSTEM AT CRYOGENIC TEMPERATURES [J].
DEEN, MJ ;
CHAN, CY ;
FONG, N .
CRYOGENICS, 1988, 28 (05) :336-338
[6]   OPERATIONAL CHARACTERISTICS OF CMOS OP-AMPS AT CRYOGENIC TEMPERATURES [J].
DEEN, MJ .
SOLID-STATE ELECTRONICS, 1988, 31 (02) :291-297
[7]  
DEEN MJ, 1988, SOLID STATE ELECTRON, V31, P1288
[8]   1 MU-M MOSFET VLSI TECHNOLOGY .2. DEVICE DESIGNS AND CHARACTERISTICS FOR HIGH-PERFORMANCE LOGIC APPLICATIONS [J].
DENNARD, RH ;
GAENSSLEN, FH ;
WALKER, EJ ;
COOK, PW .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :247-255
[9]   VERY SMALL MOSFETS FOR LOW-TEMPERATURE OPERATION [J].
GAENSSLEN, FH ;
RIDEOUT, VL ;
WALKER, EJ ;
WALKER, JJ .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (03) :218-229
[10]  
GRAY PR, 1980, ANALOG MOS INTEGRATE, P28