INCREASE IN PHOTOLUMINESCENCE OF ZN-DOPED P-TYPE INP AFTER HYDROGENATION

被引：11

作者：

SWAMINATHAN, V

LOPATA, J

SLUSKY, SEG

DAUTREMONTSMITH, WC

PEARTON, SJ

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 23期

关键词：

D O I：

10.1049/el:19891064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1584 / 1586

页数：3

共 21 条

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[8]

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[10] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J].

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