INCREASE IN PHOTOLUMINESCENCE OF ZN-DOPED P-TYPE INP AFTER HYDROGENATION

被引：11

作者：

SWAMINATHAN, V

LOPATA, J

SLUSKY, SEG

DAUTREMONTSMITH, WC

PEARTON, SJ

机构：

来源：

ELECTRONICS LETTERS | 1989年 / 25卷 / 23期

关键词：

D O I：

10.1049/el:19891064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1584 / 1586

页数：3

共 21 条

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TU, CW ;

PEARTON, SJ .

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[13] HYDROGENATION OF SHALLOW-DONOR LEVELS IN GAAS [J].

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CHEVALLIER, J ;

TU, CW ;

CUMMINGS, KD .

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[14] HYDROGEN IN CRYSTALLINE SEMICONDUCTORS [J].

PEARTON, SJ ;

CORBETT, JW ;

SHI, TS .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (03) :153-195

[15] HYDROGEN PASSIVATION OF A BULK DONOR DEFECT (EC-0.36EV) IN GAAS [J].

PEARTON, SJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4509-4511

[16] HYDROGENATION OF ELECTRON TRAPS IN BULK GAAS AND GAP [J].

PEARTON, SJ ;

HALLER, EE ;

ELLIOTT, AG .

ELECTRONICS LETTERS, 1983, 19 (24) :1052-1053

[17]

RAO EVK, 1984, 13TH P INT C DEF S A, V14, P1123

[18] A PHOTOLUMINESCENCE STUDY OF CD-RELATED CENTERS IN INP [J].

SWAMINATHAN, V ;

DONNELLY, VM ;

LONG, J .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4565-4572

[19] PHOTO-LUMINESCENCE STUDY OF NATIVE DEFECTS IN INP [J].

TEMKIN, H ;

DUTT, BV ;

BONNER, WA .

APPLIED PHYSICS LETTERS, 1981, 38 (06) :431-433

[20]

WEBER J, 1988, MATER RES SOC S P, V104, P325

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