PHOTO-LUMINESCENCE STUDY OF NATIVE DEFECTS IN INP

被引：69

作者：

TEMKIN, H

DUTT, BV

BONNER, WA

机构：

来源：

关键词：

D O I：

10.1063/1.92386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：431 / 433

页数：3

共 9 条

[1] BACHMAN GKJ, 1979, J ELECTRON MATER, V3, P279
[2] PHOTOIONIZATION CROSS-SECTION FOR MANGANESE ACCEPTORS IN GALLIUM-ARSENIDE
BROWN, WJ
WOODBURY, DA
BLAKEMORE, JS
[J]. PHYSICAL REVIEW B, 1973, 8 (12) : 5664 - 5670
[3] INP GROWTH AND PROPERTIES
HENRY, RL
SWIGGARD, EM
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (05) : 647 - 657
[4] LUMINESCENCE IN SOLIDS
KLICK, CC
SCHULMAN, JH
[J]. SOLID STATE PHYSICS, 1957, 5 : 97 - 172
[5] KROGER FA, 1964, CHEM IMPERFECT CRYST, P717
[6] ON THE PHOTOIONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS
Lucovsky, G.
[J]. SOLID STATE COMMUNICATIONS, 1965, 3 (09) : 299 - 302
[7] VANDENBOOMGAARD J, 1956, PHILIPS RES REP, V11, P27
[8] VANDENBOOMGAARD J, 1956, PHILIPS RES REP, V11, P91
[9] PHOTOLUMINESCENCE SPECTRA OF EXCITONS BOUND TO GROUP II ACCEPTORS IN INDIUM PHOSPHIDE
WHITE, AM
WILLIAMS, EW
FAIRHURST, KM
BARDSLEY, W
DAY, B
DEAN, PJ
[J]. SOLID STATE COMMUNICATIONS, 1972, 11 (09) : 1099 - +