INP GROWTH AND PROPERTIES

被引：31

作者：

HENRY, RL

SWIGGARD, EM

机构：

[1] Naval Research Laboratory, Washington, 20375, DC

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1978年 / 7卷 / 05期

关键词：

crystal growth; III-V; InP; synthesis;

D O I：

10.1007/BF02655440

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Bulk polycrystalline InP is synthesized from the elements via a gradient freeze process. Hall data for a typical boule are Nd-Na= 4.7 × 1015/cm3 and Μ77 = 28,000 cm2/V-sec. Photoluminescence data indicate that zinc is present as an acceptor impurity in the polycrystalline InP and in nominally undoped LEC single crystals grown using the synthesized InP as charge material. A series of doping experiments have determined the effective segregation coefficient to be 1.6 × 10-3 for Fe in InP. Semi-insulating InP crystals with resistivity > 107 ohm-cm have been grown consistently from melts doped with 150 ppm Fe. © 1978 AIME.

引用

页码：647 / 657

页数：11

共 11 条

[1] LEC GROWTH OF LARGE INP SINGLE-CRYSTALS [J].