HYDROGENATION OF SHALLOW-DONOR LEVELS IN GAAS

[1] HYDROGEN PLASMA-ETCHING OF GAAS OXIDE [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 898 - 900

[2] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110

[3] CHEVALLIER J, 1985, UNPUB VIDE

[4] MODIFICATION OF SURFACE CHARACTERISTICS IN GAAS WITH DRY PROCESSING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 40 - 44

[5] THE EFFECT OF LOW-PRESSURE PLASMA ON SI-SIO2 STRUCTURES AND GAAS SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 799 - 802

[6] ATOMIC AND MOLECULAR-HYDROGEN IN THE SI LATTICE [J]. PHYSICS LETTERS A, 1983, 93 (06) : 303 - 304

[7] BULK ACCEPTOR COMPENSATION PRODUCED IN PARA-TYPE SILICON AT NEAR-AMBIENT TEMPERATURES BY A H2O PLASMA [J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 606 - 608

[8] HYDROGEN CONCENTRATION AND DISTRIBUTION IN HIGH-PURITY GERMANIUM-CRYSTALS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (01) : 738 - 744

[9] NON-DESTRUCTIVE CHARACTERIZATION OF ELECTRICAL UNIFORMITY IN SEMI-INSULATING GAAS SUBSTRATES BY MICROWAVE PHOTOCONDUCTANCE TECHNIQUE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (06) : 931 - 948

[10] Hasegawa H., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P41

[1] HYDROGEN PLASMA-ETCHING OF GAAS OXIDE [J]. APPLIED PHYSICS LETTERS, 1981, 38 (11) : 898 - 900

[2] DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J]. APPLIED PHYSICS LETTERS, 1985, 47 (02) : 108 - 110

[3] CHEVALLIER J, 1985, UNPUB VIDE

[4] MODIFICATION OF SURFACE CHARACTERISTICS IN GAAS WITH DRY PROCESSING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (01) : 40 - 44

[5] THE EFFECT OF LOW-PRESSURE PLASMA ON SI-SIO2 STRUCTURES AND GAAS SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 799 - 802

[6] ATOMIC AND MOLECULAR-HYDROGEN IN THE SI LATTICE [J]. PHYSICS LETTERS A, 1983, 93 (06) : 303 - 304

[7] BULK ACCEPTOR COMPENSATION PRODUCED IN PARA-TYPE SILICON AT NEAR-AMBIENT TEMPERATURES BY A H2O PLASMA [J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 606 - 608

[8] HYDROGEN CONCENTRATION AND DISTRIBUTION IN HIGH-PURITY GERMANIUM-CRYSTALS [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1982, 29 (01) : 738 - 744

[9] NON-DESTRUCTIVE CHARACTERIZATION OF ELECTRICAL UNIFORMITY IN SEMI-INSULATING GAAS SUBSTRATES BY MICROWAVE PHOTOCONDUCTANCE TECHNIQUE [J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (06) : 931 - 948

[10] Hasegawa H., 1984, GaAs IC Symposium Technical Digest 1984 (Cat. No. 84CH2065-1), P41