NON-DESTRUCTIVE CHARACTERIZATION OF ELECTRICAL UNIFORMITY IN SEMI-INSULATING GAAS SUBSTRATES BY MICROWAVE PHOTOCONDUCTANCE TECHNIQUE

被引：9

作者：

HASEGAWA, H

OHNO, H

SHIMIZU, H

SEKI, S

机构：

来源：

关键词：

D O I：

10.1007/BF02655308

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：931 / 948

页数：18

共 17 条

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[8] ROLE OF DISLOCATIONS IN SEMI-INSULATION MECHANISM IN UNDOPED LEC GAAS CRYSTAL
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[9] KIRKPATRICK CG, 1983, 15TH C SOL STAT DEV, P145
[10] LIN AL, 1976, J APPL PHYS, V47, P1852, DOI 10.1063/1.322904