MICROWAVE CONTACTLESS TECHNIQUE FOR PHOTOCONDUCTIVITY MEASUREMENTS

[1] CHAPELL TI, 1979, IEEE T ELECTRON DEVI, V26, P1825

[2] INFRA-RED AND MICROWAVE MODULATION USING FREE CARRIERS IN SEMICONDUCTORS [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1958, 35 (08): : 273 - 278

[3] JACOB K, 1960, IRE T MICROWAVE SEP, P553

[4] APPLICATION OF MICROWAVE REFLECTION TECHNIQUE TO MEASUREMENT OF TRANSIENT AND QUIESCENT ELECTRICAL CONDUCTIVITY OF SILICON [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1969, 40 (09) : 1137 - &

[5] MICROWAVE TECHNIQUES IN MEASUREMENT OF LIFETIME IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) : 1054 - 1060

[6] TAN BTG, 1968, MICROWAVE MEASUREMEN, P28

[1] CHAPELL TI, 1979, IEEE T ELECTRON DEVI, V26, P1825

[2] INFRA-RED AND MICROWAVE MODULATION USING FREE CARRIERS IN SEMICONDUCTORS [J]. JOURNAL OF SCIENTIFIC INSTRUMENTS, 1958, 35 (08): : 273 - 278

[3] JACOB K, 1960, IRE T MICROWAVE SEP, P553

[4] APPLICATION OF MICROWAVE REFLECTION TECHNIQUE TO MEASUREMENT OF TRANSIENT AND QUIESCENT ELECTRICAL CONDUCTIVITY OF SILICON [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1969, 40 (09) : 1137 - &

[5] MICROWAVE TECHNIQUES IN MEASUREMENT OF LIFETIME IN GERMANIUM [J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (07) : 1054 - 1060

[6] TAN BTG, 1968, MICROWAVE MEASUREMEN, P28