APPLICATION OF MICROWAVE REFLECTION TECHNIQUE TO MEASUREMENT OF TRANSIENT AND QUIESCENT ELECTRICAL CONDUCTIVITY OF SILICON

被引：23

作者：

NABER, JA

SNOWDEN, DP

机构：

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1969年 / 40卷 / 09期

关键词：

D O I：

10.1063/1.1684180

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A microwave reflection technique for measuring both the transient and quiescent electrical conductivity of semiconductors in a temperature range from 4.2 to 450 K is described. This technique eliminates the difficulties due to non-Ohmic contacts when making electrical measurements on semiconductors, particularly silicon. © 1969 The American Institute of Physics.

引用

页码：1137 / &

共 7 条

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BENEDICT, TS
SHOCKLEY, W
[J]. PHYSICAL REVIEW, 1953, 89 (05): : 1152 - 1153
[2] CHARGE CARRIER INERTIA IN SEMICONDUCTORS
CHAMPLIN, KS
ARMSTRONG, DB
GUNDERSON, PD
[J]. PROCEEDINGS OF THE IEEE, 1964, 52 (06) : 677 - +
[3] CHAPLIN KS, 1966, J APPL PHYS, V37, P2356
[4] LEADON R, 1969, J APPL PHYS, V40, P2630
[5] POOLE CP, 1967, ELECTRON SPIN RESONA
[6] SULLIVAN M, 1956, J ELECTROCHEM SOC, V103, P226
[7] 1963, AMERICAN I PHYSICS H

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