MICROWAVE TECHNIQUES IN MEASUREMENT OF LIFETIME IN GERMANIUM

被引：77

作者：

RAMSA, AP

JACOBS, H

BRAND, FA

机构：

来源：

关键词：

D O I：

10.1063/1.1776978

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1054 / 1060

页数：7

共 7 条

[1] ARTHUR JB, 1956, J ELECTRON, V2, P145
[2] LIFETIME OF ELECTRONS IN P-TYPE SILICON
BEMSKI, G
[J]. PHYSICAL REVIEW, 1955, 100 (02): : 523 - 524
[3] LIFETIME IN P-TYPE SILICON
BLAKEMORE, JS
[J]. PHYSICAL REVIEW, 1958, 110 (06): : 1301 - 1308
[4] GIBSON AF, 1957, PROGRESS SEMICONDUCT, V2, P229
[5] STATISTICS OF THE RECOMBINATIONS OF HOLES AND ELECTRONS
SHOCKLEY, W
READ, WT
[J]. PHYSICAL REVIEW, 1952, 87 (05): : 835 - 842
[6] SHOCKLEY W, 1950, ELECTRONS HOLES SEMI, P54
[7] MEASUREMENT OF CARRIER LIFETIMES IN GERMANIUM AND SILICON
STEVENSON, DT
KEYES, RJ
[J]. JOURNAL OF APPLIED PHYSICS, 1955, 26 (02) : 190 - 195