NEW CONTACTLESS METHOD FOR LIFETIME MEASUREMENT IN SEMICONDUCTOR WAFERS

[1] BARANSKYI PJ, 1975, SEMICONDUCTOR ELECTR

[2] NEW PRINCIPLE OF CONTACTLESS LIFETIME DETERMINATION IN SEMICONDUCTOR WAFERS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (01) : 60 - 62

[3] HLAVKA J, 1976, SCRIPTA FS NAT U BRU, V1, P23

[4] HLAVKA J, 1981, INT WORKING M ION IM, P71

[5] Holmes P. J., 1962, ELECTROCHEMISTRY SEM

[6] LEVIN BJ, 1968, P IEEE, V40, P1230

[7] MEASUREMENT OF LIFETIMES IN PHOTOCONDUCTORS BY MEANS OF OPTICAL BEATING [J]. INFRARED PHYSICS, 1966, 6 (04): : 173 - +

[8] MEASUREMENT OF MINORITY CARRIER LIFETIME IN GERMANIUM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1420 - 1423

[9] THEORY OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1713 - 1725

[1] BARANSKYI PJ, 1975, SEMICONDUCTOR ELECTR

[2] NEW PRINCIPLE OF CONTACTLESS LIFETIME DETERMINATION IN SEMICONDUCTOR WAFERS [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (01) : 60 - 62

[3] HLAVKA J, 1976, SCRIPTA FS NAT U BRU, V1, P23

[4] HLAVKA J, 1981, INT WORKING M ION IM, P71

[5] Holmes P. J., 1962, ELECTROCHEMISTRY SEM

[6] LEVIN BJ, 1968, P IEEE, V40, P1230

[7] MEASUREMENT OF LIFETIMES IN PHOTOCONDUCTORS BY MEANS OF OPTICAL BEATING [J]. INFRARED PHYSICS, 1966, 6 (04): : 173 - +

[8] MEASUREMENT OF MINORITY CARRIER LIFETIME IN GERMANIUM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11): : 1420 - 1423

[9] THEORY OF THE PHOTOMAGNETOELECTRIC EFFECT IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1956, 101 (06): : 1713 - 1725