MODIFICATION OF SURFACE CHARACTERISTICS IN GAAS WITH DRY PROCESSING

[1] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[2] BLOOD P, 1981, I PHYS C SER, V56, P251

[3] BRAILOVSKII EY, 1972, P DEFECTS SEMICONDUC, P121

[4] CHEN CL, 1982, IEEE T ELECTRON DEV, V29, P1522, DOI 10.1109/T-ED.1982.20909

[5] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &

[6] THE EFFECT OF LOW-PRESSURE PLASMA ON SI-SIO2 STRUCTURES AND GAAS SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 799 - 802

[7] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1693 - &

[8] PANG SW, 1983, P IEEE CORNELL C

[9] PASSIVATION OF GAAS-SURFACES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 359 - 370

[10] ION-BEAM TECHNIQUES COMBINING INSULATOR DEPOSITION AND HYDROGEN PLASMA-ETCHING FOR III-V-COMPOUND METAL-INSULATOR SEMICONDUCTOR-DEVICE APPLICATIONS [J]. THIN SOLID FILMS, 1983, 103 (1-2) : 211 - 219

[1] DEPENDENCE OF RESIDUAL DAMAGE ON TEMPERATURE DURING AR+ SPUTTER CLEANING OF SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (03) : 907 - 913

[2] BLOOD P, 1981, I PHYS C SER, V56, P251

[3] BRAILOVSKII EY, 1972, P DEFECTS SEMICONDUC, P121

[4] CHEN CL, 1982, IEEE T ELECTRON DEV, V29, P1522, DOI 10.1109/T-ED.1982.20909

[5] P-N JUNCTION FORMATION DURING MOLECULAR-BEAM EPITAXY OF GE-DOPED GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) : 4422 - &

[6] THE EFFECT OF LOW-PRESSURE PLASMA ON SI-SIO2 STRUCTURES AND GAAS SUBSTRATES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03): : 799 - 802

[7] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) : 1693 - &

[8] PANG SW, 1983, P IEEE CORNELL C

[9] PASSIVATION OF GAAS-SURFACES [J]. JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) : 359 - 370

[10] ION-BEAM TECHNIQUES COMBINING INSULATOR DEPOSITION AND HYDROGEN PLASMA-ETCHING FOR III-V-COMPOUND METAL-INSULATOR SEMICONDUCTOR-DEVICE APPLICATIONS [J]. THIN SOLID FILMS, 1983, 103 (1-2) : 211 - 219