ION-BEAM TECHNIQUES COMBINING INSULATOR DEPOSITION AND HYDROGEN PLASMA-ETCHING FOR III-V-COMPOUND METAL-INSULATOR SEMICONDUCTOR-DEVICE APPLICATIONS

被引:11
作者
SIBRAN, C
BLANCHET, R
GARRIGUES, M
VIKTOROVITCH, P
机构
关键词
D O I
10.1016/0040-6090(83)90437-6
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:211 / 219
页数:9
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