REDUCTION OF FAST SURFACE-STATES ON P-TYPE GAAS

被引：6

作者：

AHRENKIEL, RK ^{[1
]}

WAGNER, RS ^{[1
]}

PATTILLO, S ^{[1
]}

DUNLAVY, D ^{[1
]}

JERVIS, T ^{[1
]}

KAZMERSKI, LL ^{[1
]}

IRELAND, PJ ^{[1
]}

机构：

[1] LOS ALAMOS NATL LAB,LOS ALAMOS,NM 87545

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 08期

关键词：

D O I：

10.1063/1.93240

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：700 / 703

页数：4

共 12 条

[1] NONDESTRUCTIVE CHARACTERIZATION OF INTERFACE LAYERS BETWEEN SI OR GAAS AND THEIR OXIDES BY SPECTROSCOPIC ELLIPSOMETRY
ASPNES, DE
THEETEN, JB
CHANG, RPH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1374 - 1378
[2] APPLICATION OF SELECTIVE CHEMICAL-REACTION CONCEPT FOR CONTROLLING THE PROPERTIES OF OXIDES ON GAAS
CHANG, RPH
COLEMAN, JJ
POLAK, AJ
FELDMAN, LC
CHANG, CC
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (03) : 237 - 238
[3] NEW METHOD OF FABRICATING GALLIUM-ARSENIDE MOS DEVICES
CHANG, RPH
COLEMAN, JJ
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 332 - 333
[4] DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING
FARROW, RL
CHANG, RK
MROCZKOWSKI, S
POLLAK, FH
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 768 - 770
[5] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
HASEGAWA, H
FORWARD, KE
HARTNAGEL, HL
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569
[6] LOCAL ATOMIC ORDER IN NATIVE III-V OXIDES
LUCOVSKY, G
BAUER, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 946 - 951
[7] LUCOVSKY G, COMMUNICATION
[8] ELECTRICAL-PROPERTIES OF GALLIUM ARSENIDE-INSULATOR INTERFACE
MEINERS, LG
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1402 - 1407
[9] THERMAL OXIDATION OF GAAS
MURARKA, SP
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 180 - 181
[10] SI-SIO2 INTERFACE - ELECTRICAL PROPERTIES AS DETERMINED BY METAL-INSULATOR-SILICON CONDUCTANCE TECHNIQUE
NICOLLIA.EH
GOETZBER.A
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06): : 1055 - +

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