NEW METHOD OF FABRICATING GALLIUM-ARSENIDE MOS DEVICES

被引：26

作者：

CHANG, RPH

COLEMAN, JJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 05期

关键词：

D O I：

10.1063/1.90040

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：332 / 333

页数：2

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[1] STABLE CHARGE STORAGE OF MAOS DIODES ON GAAS BY NEW ANODIC-OXIDATION
BAYRAKTAROGLU, B
HANNAH, SJ
HARTNAGEL, HL
[J]. ELECTRONICS LETTERS, 1977, 13 (02) : 45 - 46
[2] PLASMA-GROWN OXIDE ON GAAS - SEMI-QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS
CHANG, CC
CHANG, RPH
MURARKA, SP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) : 481 - 487
[3] PLASMA OXIDATION OF GAAS
CHANG, RPH
SINHA, AK
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58
[4] PLASMA OXIDATION OF ALUMINUM FILM ON GAAS - STUDY BY AUGER-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY
CHANG, RPH
CHANG, CC
SHENG, TT
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 657 - 659
[5] MULTIPURPOSE PLASMA REACTOR FOR MATERIALS RESEARCH AND PROCESSING
CHANG, RPH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 278 - 280
[6] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
HASEGAWA, H
FORWARD, KE
HARTNAGEL, HL
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569
[7] ANALYSIS OF PLASMA-GROWN GAAS OXIDE-FILMS
KAUFFMAN, RL
FELDMAN, LC
POATE, JM
CHANG, RPH
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (07) : 319 - 321
[8] ANODIC-OXIDATION OF GAAS IN AQUEOUS H2O2 SOLUTION
LOGAN, RA
SCHWARTZ, B
SUNDBURG, WJ
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (10) : 1385 - 1390
[9] LUTHER LC, UNPUBLISHED
[10] THERMAL OXIDATION OF GAAS
MURARKA, SP
[J]. APPLIED PHYSICS LETTERS, 1975, 26 (04) : 180 - 181