PLASMA-GROWN OXIDE ON GAAS - SEMI-QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS

被引：37

作者：

CHANG, CC

CHANG, RPH

MURARKA, SP

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1978年 / 125卷 / 03期

关键词：

D O I：

10.1149/1.2131478

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：481 / 487

页数：7

共 13 条

[1] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS [J].

CHANG, CC ;

SCHWARTZ, B ;

MURARKA, SP .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :922-926

[2] GENERAL FORMALISM FOR QUANTITATIVE AUGER ANALYSIS [J].

CHANG, CC .

SURFACE SCIENCE, 1975, 48 (01) :9-21

[3] OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA [J].

CHANG, CC ;

BOULIN, DM .

SURFACE SCIENCE, 1977, 69 (02) :385-402

[4]

CHANG CC, 1974, CHARACTERIZATION SOL, pCH20

[5]

CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397

[6] PLASMA OXIDATION OF GAAS [J].

CHANG, RPH ;

SINHA, AK .

APPLIED PHYSICS LETTERS, 1976, 29 (01) :56-58

[7] PLASMA OXIDATION OF ALUMINUM FILM ON GAAS - STUDY BY AUGER-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY [J].

CHANG, RPH ;

CHANG, CC ;

SHENG, TT .

APPLIED PHYSICS LETTERS, 1977, 30 (12) :657-659

[8] MULTIPURPOSE PLASMA REACTOR FOR MATERIALS RESEARCH AND PROCESSING [J].

CHANG, RPH .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :278-280

[9]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[10] ANALYSIS OF PLASMA-GROWN GAAS OXIDE-FILMS [J].

KAUFFMAN, RL ;

FELDMAN, LC ;

POATE, JM ;

CHANG, RPH .

APPLIED PHYSICS LETTERS, 1977, 30 (07) :319-321

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