ION-BEAM TECHNIQUES COMBINING INSULATOR DEPOSITION AND HYDROGEN PLASMA-ETCHING FOR III-V-COMPOUND METAL-INSULATOR SEMICONDUCTOR-DEVICE APPLICATIONS

被引：11

作者：

SIBRAN, C

BLANCHET, R

GARRIGUES, M

VIKTOROVITCH, P

机构：

来源：

关键词：

D O I：

10.1016/0040-6090(83)90437-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：211 / 219

页数：9

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