EFFECT OF INTERFACE ARSENIC DOMAINS ON ELECTRICAL-PROPERTIES OF GAAS MOS STRUCTURES

被引：39

作者：

CHANG, RPH

SHENG, TT

CHANG, CC

COLEMAN, JJ

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 33卷 / 04期

关键词：

D O I：

10.1063/1.90329

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：341 / 342

页数：2

相关论文

共 12 条

[1] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS
CHANG, CC
SCHWARTZ, B
MURARKA, SP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 922 - 926
[2] CHANG CC, 1978, J ELCHEM SO, V125, P482
[3] CHANG CK, 1977, J HETEROCYCLIC CHEM, V14, P943, DOI 10.1116/1.569397
[4] CHANG RK, UNPUBLISHED
[5] PLASMA OXIDATION OF GAAS
CHANG, RPH
SINHA, AK
[J]. APPLIED PHYSICS LETTERS, 1976, 29 (01) : 56 - 58
[6] PLASMA OXIDATION OF ALUMINUM FILM ON GAAS - STUDY BY AUGER-SPECTROSCOPY AND TRANSMISSION ELECTRON-MICROSCOPY
CHANG, RPH
CHANG, CC
SHENG, TT
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 657 - 659
[7] MULTIPURPOSE PLASMA REACTOR FOR MATERIALS RESEARCH AND PROCESSING
CHANG, RPH
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01): : 278 - 280
[8] NEW METHOD OF FABRICATING GALLIUM-ARSENIDE MOS DEVICES
CHANG, RPH
COLEMAN, JJ
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 332 - 333
[9] DC PLASMA ANODIZATION OF GAAS
CHESLER, LA
ROBINSON, GY
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (01) : 60 - 62
[10] DETECTION OF EXCESS CRYSTALLINE AS AND SB IN III-V OXIDE INTERFACES BY RAMAN-SCATTERING
FARROW, RL
CHANG, RK
MROCZKOWSKI, S
POLLAK, FH
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 768 - 770