HYDROGEN PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE GALLIUM-ARSENIDE

被引：15

作者：

PEARTON, SJ

TAVENDALE, AJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 02期

关键词：

D O I：

10.1063/1.332089

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1154 / 1155

页数：2

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[7] HYDROGEN PASSIVATION OF DEFECTS IN DEFORMED SILICON [J].

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[8] PASSIVATION OF GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON [J].

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GINLEY, DS .

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