HYDROGEN PASSIVATION OF DEFECTS IN DEFORMED SILICON

被引：48

作者：

POHORYLES, B

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1981年 / 67卷 / 01期

关键词：

D O I：

10.1002/pssa.2210670152

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K75 / K80

页数：6

共 8 条

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SEAGER, CH ;

GINLEY, DS .

[5] STUDIES OF THE HYDROGEN PASSIVATION OF SILICON GRAIN-BOUNDARIES [J].

SEAGER, CH ;

GINLEY, DS .

[6] POST-HYDROGENATION OF CVD DEPOSITED A-SI FILMS [J].

SOL, N ;

KAPLAN, D ;

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[7]

SZKIELKO W, 1981, CRYST RES TECHNOL, V16, P197

[8]

WANG KL, 1979, APPL PHYS LETT, V31, P48