HYDROGENATION OF ELECTRON TRAPS IN BULK GAAS AND GAP

被引：10

作者：

PEARTON, SJ ^{[1
]}

HALLER, EE ^{[1
]}

ELLIOTT, AG ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,DIV OPTOELECTR,PALO ALTO,CA 94304

来源：

ELECTRONICS LETTERS | 1983年 / 19卷 / 24期

关键词：

D O I：

10.1049/el:19830714

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1052 / 1053

页数：2

共 11 条

[1] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J].

BENTON, JL ;

DOHERTY, CJ ;

FERRIS, SD ;

FLAMM, DL ;

KIMERLING, LC ;

LEAMY, HJ .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :670-671

[2] PASSIVATION OF THE DOMINANT DEEP LEVEL (EL2) IN GAAS BY HYDROGEN [J].

LAGOWSKI, J ;

KAMINSKA, M ;

PARSEY, JM ;

GATOS, HC ;

LICHTENSTEIGER, M .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1078-1080

[3] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3014-3022

[4] MANIFESTATIONS OF DEEP LEVELS POINT-DEFECTS IN GAAS [J].

MARTIN, GM ;

MAKRAMEBEID, S .

PHYSICA B & C, 1983, 116 (1-3) :371-383

[5] CORRELATION METHOD FOR SEMICONDUCTOR TRANSIENT SIGNAL MEASUREMENTS [J].

MILLER, GL ;

RAMIREZ, JV ;

ROBINSON, DAH .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (06) :2638-2644

[6] NEGATIVE-U PROPERTIES OF THE LATTICE VACANCY IN SILICON [J].

NEWTON, JL ;

CHATTERJEE, AP ;

HARRIS, RD ;

WATKINS, GD .

PHYSICA B & C, 1983, 116 (1-3) :219-223

[7] HYDROGEN PASSIVATION OF GOLD-RELATED DEEP LEVELS IN SILICON [J].

PEARTON, SJ ;

TAVENDALE, AJ .

PHYSICAL REVIEW B, 1982, 26 (12) :7105-7108

[8] HYDROGEN PASSIVATION OF DEEP METAL-RELATED DONOR CENTERS IN GERMANIUM [J].

PEARTON, SJ ;

TAVENDALE, AJ .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) :820-823

[9] HYDROGEN PASSIVATION OF COPPER-RELATED DEFECTS IN GERMANIUM [J].

PEARTON, SJ .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :253-255

[10] HYDROGEN PASSIVATION OF A BULK DONOR DEFECT (EC-0.36EV) IN GAAS [J].

PEARTON, SJ .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) :4509-4511

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