NEGATIVE-U PROPERTIES OF THE LATTICE VACANCY IN SILICON

被引：50

作者：

NEWTON, JL ^{[1
]}

CHATTERJEE, AP ^{[1
]}

HARRIS, RD ^{[1
]}

WATKINS, GD ^{[1
]}

机构：

[1] LEHIGH UNIV,SHERMAN FAIRCHILD LAB,BETHLEHEM,PA 18015

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90250-4

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：219 / 223

页数：5

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