STUDIES OF DEFECTS INTRODUCED BY ELECTRON-IRRADIATION AT 4.2DEGREESK IN P-SILICON BY THERMALLY STIMULATED CAPACITANCE TECHNIQUE

被引：17

作者：

BRABANT, JC ^{[1
]}

PUGNET, M ^{[1
]}

BARBOLLA, J ^{[1
]}

BROUSSEAU, M ^{[1
]}

机构：

[1] INST NATL SCI APPL,DEPT PHYS,CNRS,PHYS SOLIDES LAB,F-31077 TOULOUSE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1976年 / 47卷 / 11期

关键词：

D O I：

10.1063/1.322522

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：4809 / 4813

页数：5

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