PROPERTIES OF 1.0-MEV-ELECTRON-IRRADIATED DEFECT CENTERS IN SILICON

被引：126

作者：

WALKER, JW

SAH, CT

机构：

[1] UNIV ILLINOIS, DEPT ELECT ENGN, URBANA, IL 61801 USA

[2] UNIV ILLINOIS, DEPT PHYS, URBANA, IL 61801 USA

来源：

PHYSICAL REVIEW B | 1973年 / 7卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.7.4587

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4587 / 4605

页数：19

共 66 条

[1] ELECTRON PARAMAGNETIC RESONANCE AND ELECTRICAL PROPERTIES OF DOMINANT PARAMAGNETIC DEFECT IN ELECTRON-IRRADIATED P-TYPE SILICON
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[2] ELECTRON-PARAMAGNETIC-RESONANCE DETECTION OF OPTICALLY INDUCED DIVACANCY ALIGNMENT IN SILICON
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[5] RECOMBINATION MECHANISMS
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[J]. SOLID-STATE ELECTRONICS, 1972, 15 (01) : 69 - +
[7] EFFECT OF ELECTRON ENERGY ON DEFECT INTRODUCTION IN SILICON
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1966, 27 (6-7) : 913 - &
[8] DEFECT-IMPURITY RELATIONSHIPS IN ELECTRON-DAMAGED SILICON
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) : 24 - +
[9] DEFECT CENTERS IN BORON-IMPLANTED SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (12) : 4768 - &
[10] 1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY
CHENG, LJ
CORELLI, JC
CORBETT, JW
WATKINS, GD
[J]. PHYSICAL REVIEW, 1966, 152 (02): : 761 - +

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