ELECTRON-PARAMAGNETIC-RESONANCE DETECTION OF OPTICALLY INDUCED DIVACANCY ALIGNMENT IN SILICON

被引:28
作者
AMMERLAAN, CA
WATKINS, GD
机构
来源
PHYSICAL REVIEW B-SOLID STATE | 1972年 / 5卷 / 10期
关键词
D O I
10.1103/PhysRevB.5.3988
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
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页码:3988 / +
页数:1
相关论文
共 18 条
[1]   A NEW PARAMAGNETIC CENTER IN ELECTRON IRRADIATED SILICON [J].
BEMSKI, G ;
WRIGHT, K ;
SZYMANSKI, B .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1963, 24 (01) :1-&
[2]   EFFECT OF POLARIZED LIGHT ON 1.8-MU, 3.3-MU, AND 3.9-MU RADIATION-INDUCED ABSORPTION BANDS IN SILICON [J].
CHENG, LJ ;
VAJDA, P .
PHYSICAL REVIEW, 1969, 186 (03) :816-&
[3]   1.8- 3.3- AND 3.9-MU BANDS IN IRRADIATED SILICON - CORRELATIONS WITH DIVACANCY [J].
CHENG, LJ ;
CORELLI, JC ;
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1966, 152 (02) :761-+
[4]   CHARACTERISTICS OF NEUTRON DAMAGE IN SILICON [J].
CHENG, LJ ;
LORI, J .
PHYSICAL REVIEW, 1968, 171 (03) :856-+
[5]   3.9MU PHOTOCONDUCTIVITY BAND IN NEUTRON-IRRADIATED P-TYPE SILICON [J].
CHENG, LJ .
PHYSICS LETTERS A, 1967, A 24 (13) :729-&
[6]  
CHENG LJ, 1968, RADIATION EFFECTS SE, P143
[7]   SILICON DIVACANCY AND ITS DIRECT PRODUCTION BY ELECTRON IRRADIATION [J].
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW LETTERS, 1961, 7 (08) :314-&
[8]   PRODUCTION OF DIVACANCIES AND VACANCIES BY ELECTRON IRRADIATION OF SILICON [J].
CORBETT, JW ;
WATKINS, GD .
PHYSICAL REVIEW, 1965, 138 (2A) :A555-&
[9]   INFRARED ABSORPTION AND PHOTOCONDUCTIVITY IN IRRADIATED SILICON [J].
FAN, HY ;
RAMDAS, AK .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (08) :1127-1134
[10]   PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN SILICON - DIVACANCY-ASSOCIATED ENERGY LEVELS [J].
KALMA, AH ;
CORELLI, JC .
PHYSICAL REVIEW, 1968, 173 (03) :734-+