HYDROGEN PASSIVATION OF GOLD-RELATED DEEP LEVELS IN SILICON

被引：107

作者：

PEARTON, SJ

TAVENDALE, AJ

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 26卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.26.7105

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7105 / 7108

页数：4

共 20 条

[1] HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J].

BENTON, JL ;

DOHERTY, CJ ;

FERRIS, SD ;

FLAMM, DL ;

KIMERLING, LC ;

LEAMY, HJ .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :670-671

[2] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J].

BUEHLER, MG .

SOLID-STATE ELECTRONICS, 1972, 15 (01) :69-+

[3] PROPERTIES OF GOLD IN SILICON [J].

BULLIS, WM .

SOLID-STATE ELECTRONICS, 1966, 9 (02) :143-&

[4] ENERGY-LEVELS IN SILICON [J].

CHEN, JW ;

MILNES, AG .

ANNUAL REVIEW OF MATERIALS SCIENCE, 1980, 10 :157-228

[5] GOLD AS A RECOMBINATION CENTRE IN SILICON [J].

FAIRFIELD, JM ;

GOKHALE, BV .

SOLID-STATE ELECTRONICS, 1965, 8 (08) :685-+

[6] PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP .2. CAPTURE CROSS-SECTIONS [J].

HENRY, CH ;

KUKIMOTO, H ;

MILLER, GL ;

MERRITT, FR .

PHYSICAL REVIEW B, 1973, 7 (06) :2499-2507

[7] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[8] COMPLEX NATURE OF GOLD-RELATED DEEP LEVELS IN SILICON [J].

LANG, DV ;

GRIMMEISS, HG ;

MEIJER, E ;

JAROS, M .

PHYSICAL REVIEW B, 1980, 22 (08) :3917-3934

[9]

LAWSON EC, COMMUNICATION

[10]

MILNES AG, 1973, DEEP IMPULITIES SEMI, P17

← 1 2 →