THIN-LAYER LIQUID-PHASE EPITAXY OF INGAPAS HETEROSTRUCTURES IN SHORT INTERVALS ()100MS) - NON-DIFFUSION-LIMITED CRYSTAL-GROWTH

被引：27

作者：

REZEK, EA ^{[1
]}

VOJAK, BA ^{[1
]}

CHIN, R ^{[1
]}

HOLONYAK, N ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 01期

关键词：

D O I：

10.1007/BF02654912

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：255 / 285

页数：31

共 45 条

[1]

ANTYPAS GA, 1977, 33B I PHYS C SER, P96

[2] IMPACT IONIZATION IN MULTILAYERED HETEROJUNCTION STRUCTURES [J].

CHIN, R ;

HOLONYAK, N ;

STILLMAN, GE ;

TANG, JY ;

HESS, K .

ELECTRONICS LETTERS, 1980, 16 (12) :467-469

[3] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J].

CHIN, R ;

HOLONYAK, N ;

VOJAK, BA ;

HESS, K ;

DUPUIS, RD ;

DAPKUS, PD .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :19-21

[4]

COLEMAN JJ, 1977, 33B I PHYS C SER, P339

[5] EFFECTS OF A FINITE MELT ON THE THICKNESS AND COMPOSITION OF LIQUID-PHASE EPITAXIAL INGAASP AND INGAAS LAYERS GROWN BY THE DIFFUSION-LIMITED STEP-COOLING TECHNIQUE [J].

COOK, LW ;

TASHIMA, MM ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1980, 36 (11) :904-907

[6]

DECREMOUX B, 1979, 45B I PHYS C SER, P52

[7]

DINGLE R, 1978, APPL PHYS LETT, V33, P667

[8]

Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[9]

Esaki L., 1976, Critical Reviews in Solid State Sciences, V6, P195, DOI 10.1080/10408437608243555

[10]

ESAKI L, 1972, 11TH P INT C PHYS SE, P431

← 1 2 3 4 5 →