IMAGING OF DOPANT REGIONS IN SILICON WITH THERMAL-WAVE ELECTRON-MICROSCOPY

被引：55

作者：

ROSENCWAIG, A

WHITE, RM

机构：

[1] UNIV CALIF BERKELEY,DEPT ELECTR ENGN,BERKELEY,CA 94720

[2] UNIV CALIF BERKELEY,COMP SCI & ELECTR RES LAB,BERKELEY,CA 94720

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 03期

关键词：

D O I：

10.1063/1.92288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：165 / 167

页数：3

相关论文

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