ORIENTATION-DEPENDENT CHEMISTRY AND SCHOTTKY-BARRIER FORMATION AT METAL-GAAS INTERFACES

被引:55
作者
CHANG, S
BRILLSON, LJ
KIME, YJ
RIOUX, DS
KIRCHNER, PD
PETTIT, GD
WOODALL, JM
机构
[1] SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13210
[2] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1103/PhysRevLett.64.2551
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Soft-x-ray photoemission spectroscopy of metals deposited on GaAs demonstrates that minor misorientations of the (100) surface produce major deviations from Schottky-like behavior via increased chemical interactions. The degree of chemical activity correlates with the density of dangling bonds at the [110], [111]A, and (111)B steps, producing deep levels with acceptor character which dramatically reduce the range of Fermi-level stabilization. These results demonstrate the central role of local atomic bonding in the Schottky-barrier formation. © 1990 The American Physical Society.
引用
收藏
页码:2551 / 2554
页数:4
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