MULTIPLY-GRADED INGAALAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：10

作者：

VLCEK, JC

FONSTAD, CG

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 13期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; BIPOLAR DEVICES; TRANSISTORS;

D O I：

10.1049/el:19910756

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

InGaAlAs/InP double heterojunction bipolar transistors with continuously graded base-emitter and base-collector junctions were successively fabricated, and their DC characteristics measured. The devices exhibited a lower offset voltage (V(offset) < 20 mV), lower output conductance and higher collector-emitter breakdown voltage (BV(CEO) > 13 V, BV(CBO) > 20 V) than are typically achieved in single heterojunction InGaAlAs devices.

引用

页码：1213 / 1215

页数：3

共 6 条

[1]

ASBECK PM, 1990, 2ND INT C INP REL CO

[2] OPTIMUM EMITTER GRADING FOR HETEROJUNCTION BIPOLAR-TRANSISTORS [J].